Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANS1N5816

JANS1N5816

DIODE SCHOTTKY 150V 20A DO203AA

Microchip Technology

5,723
RFQ
JANS1N5816

Datasheet

- DO-203AA, DO-4, Stud Bulk Discontinued at Digi-Key Schottky 150 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
D3001N68TXPSA1

D3001N68TXPSA1

DIODE GEN PURP 6.8KV 3910A

Infineon Technologies

3,717
RFQ
D3001N68TXPSA1

Datasheet

- DO-200AE Tray Active Standard 6800 V 3910A 1.7 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6800 V - - - Chassis Mount - -40°C ~ 160°C
D2601N85TXPSA1

D2601N85TXPSA1

DIODE GEN PURP 8.5KV 3040A

Infineon Technologies

7,416
RFQ
D2601N85TXPSA1

Datasheet

- DO-200AE Tray Active Standard 8500 V 3040A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 8500 V - - - Chassis Mount - -40°C ~ 160°C
D2601N90TXPSA1

D2601N90TXPSA1

DIODE GEN PURP 9KV 3040A

Infineon Technologies

7,931
RFQ
D2601N90TXPSA1

Datasheet

- DO-200AE Tray Active Standard 9000 V 3040A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 9000 V - - - Chassis Mount - -40°C ~ 160°C
D3501N42TVFXPSA1

D3501N42TVFXPSA1

DIODE GP 4.2KV 4870A D12035K-1

Infineon Technologies

7,405
RFQ

-

- DO-200AE Tray Active Standard 4200 V 4870A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4200 V - - - Chassis Mount BG-D12035K-1 160°C (Max)
D1961SH45TXPSA1

D1961SH45TXPSA1

DIODE GEN PURP 4.5KV 2380A

Infineon Technologies

3,234
RFQ
D1961SH45TXPSA1

Datasheet

- DO-200AE Tray Active Standard 4500 V 2380A 2.5 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 4500 V - - - Chassis Mount - 0°C ~ 140°C
HBL2010BRP

HBL2010BRP

1 CHANNEL ESD PROTECTOR

onsemi

7,956
RFQ

-

* - Bulk Obsolete - - - - - - - - - - - - -
D1721NH90TAOSA1

D1721NH90TAOSA1

DIODE GEN PURP 2160A D10026K-1

Infineon Technologies

4,076
RFQ
D1721NH90TAOSA1

Datasheet

- DO-200, Variant Tray Not For New Designs Standard - 2160A - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 9000 V - - - Chassis Mount BG-D10026K-1 0°C ~ 140°C
D6001N50TXPSA1

D6001N50TXPSA1

DIODE GEN PURP 5KV 8010A

Infineon Technologies

2,515
RFQ
D6001N50TXPSA1

Datasheet

- DO-200AE Tray Active Standard 5000 V 8010A 1.3 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 400 mA @ 5000 V - - - Chassis Mount - -40°C ~ 160°C
FR304-T

FR304-T

DIODE GEN PURP 400V 3A DO201AD

Diodes Incorporated

6,347
RFQ
FR304-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 400 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 400 V - - - Through Hole DO-201AD -65°C ~ 175°C
1N5401-T

1N5401-T

DIODE GEN PURP 100V 3A DO201AD

Diodes Incorporated

6,192
RFQ
1N5401-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 100 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5402-T

1N5402-T

DIODE GEN PURP 200V 3A DO201AD

Diodes Incorporated

9,918
RFQ
1N5402-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5404-T

1N5404-T

DIODE GEN PURP 400V 3A DO201AD

Diodes Incorporated

5,015
RFQ
1N5404-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 400 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5406-T

1N5406-T

DIODE GEN PURP 600V 3A DO201AD

Diodes Incorporated

9,320
RFQ
1N5406-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 600 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5407-T

1N5407-T

DIODE GEN PURP 800V 3A DO201AD

Diodes Incorporated

5,556
RFQ
1N5407-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 800 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5408-T

1N5408-T

DIODE GEN PURP 1KV 3A DO201AD

Diodes Incorporated

5,822
RFQ
1N5408-T

Datasheet

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 1000 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
VS-1N3209

VS-1N3209

DIODE GEN PURP 100V 15A DO203AB

Vishay General Semiconductor - Diodes Division

2,442
RFQ
VS-1N3209

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
VS-1N3210

VS-1N3210

DIODE GEN PURP 200V 15A DO203AB

Vishay General Semiconductor - Diodes Division

8,745
RFQ
VS-1N3210

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 200 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
VS-1N2133RA

VS-1N2133RA

DIODE GEN PURP 300V 60A DO203AB

Vishay General Semiconductor - Diodes Division

2,400
RFQ
VS-1N2133RA

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 300 V 60A 1.3 V @ 188 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 300 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
VS-1N2135RA

VS-1N2135RA

DIODE GEN PURP 400V 60A DO203AB

Vishay General Semiconductor - Diodes Division

7,763
RFQ
VS-1N2135RA

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 60A 1.3 V @ 188 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
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