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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
W108CED220 DIODE GEN PURP 2.2KV 10815A W112 IXYS	5,818	-	RFQ	Datasheet	-	DO-200AE	Box	Active	Standard	2200 V	10815A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis Mount	W112	-
W7395ED450 DIODE GEN PURP 2.7KV 7395A W112 IXYS	6,093	-	RFQ	-	-	DO-200AE	Box	Active	Standard	2700 V	7395A	1.4 V @ 7000 A	Standard Recovery >500ns, > 200mA (Io)	69 µs	120 mA @ 2700 V	-	-	-	Chassis Mount	W112	-40°C ~ 160°C
DZ950N44KS02HPSA1 DIODE GEN PURP 4.4KV 950A PB70-1 Infineon Technologies	3,012	-	RFQ	Datasheet	-	Module	Tray	Active	Standard	4400 V	950A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4400 V	-	-	-	Chassis Mount	BG-PB70-1	160°C (Max)
E1250HC45E DIODE GEN PURP 4.5KV 1355A W122 IXYS	2,783	-	RFQ	Datasheet	-	DO-200AD	Box	Active	Standard	4500 V	1355A	2.07 V @ 1250 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	1 mA @ 4500 V	-	-	-	Chassis Mount	W122	-
W7395ED480 DIODE GEN PURP 2.88KV 7395A W112 IXYS	2,880	-	RFQ	-	-	DO-200AE	Box	Active	Standard	2880 V	7395A	1.4 V @ 7000 A	Standard Recovery >500ns, > 200mA (Io)	69 µs	120 mA @ 2880 V	-	-	-	Chassis Mount	W112	-40°C ~ 160°C
W6360EC600 DIODE GEN PURP 6KV 6395A W111 IXYS	4,051	-	RFQ	Datasheet	-	DO-200AE	Box	Active	Standard	6000 V	6395A	1.4 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	73 µs	120 mA @ 6000 V	-	-	-	Chassis Mount	W111	-40°C ~ 150°C
D921S45TXPSA1 DIODE GEN PURP 4.5KV 1630A Infineon Technologies	9,616	-	RFQ	Datasheet	-	DO-200AD	Tray	Active	Standard	4500 V	1630A	2.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	-	-	Chassis Mount	-	-40°C ~ 140°C
W5715ED600 DIODE GEN PURP 6KV 5750A W112 IXYS	9,925	-	RFQ	Datasheet	-	DO-200AE	Box	Active	Standard	6000 V	5750A	1.4 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	73 µs	120 mA @ 6000 V	-	-	-	Chassis Mount	W112	-40°C ~ 150°C
E2400EC45E DIODE GEN PURP 4.5KV 2490A W111 IXYS	2,780	-	RFQ	Datasheet	-	DO-200AE	Box	Active	Standard	4500 V	2490A	3.65 V @ 2400 A	Standard Recovery >500ns, > 200mA (Io)	1.22 µs	100 mA @ 4500 V	-	-	-	Chassis Mount	W111	-40°C ~ 140°C
D1031SH45TXPSA1 DIODE GEN PURP 4.5KV 1450A Infineon Technologies	6,126	-	RFQ	Datasheet	-	DO-200AD	Tray	Active	Standard	4500 V	1450A	4.2 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	-	-	Chassis Mount	-	0°C ~ 140°C
D931SH65TXPSA1 DIODE GEN PURP 6.5KV 1220A Infineon Technologies	4,291	-	RFQ	Datasheet	-	DO-200AD	Tray	Active	Standard	6500 V	1220A	5.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 6500 V	-	-	-	Chassis Mount	-	0°C ~ 140°C
E3000EC45E DIODE GEN PURP 4.5KV 3410A W111 IXYS	9,075	-	RFQ	Datasheet	-	DO-200AE	Box	Active	Standard	4500 V	3410A	3.1 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	1.25 µs	90 mA @ 4500 V	-	-	-	Chassis Mount	W111	-40°C ~ 140°C
D1251S45TXPSA1 DIODE GEN PURP 4.5KV 1530A Infineon Technologies	6,504	-	RFQ	Datasheet	-	DO-200AC, K-PUK	Tray	Active	Standard	4500 V	1530A	2.5 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	80 mA @ 4500 V	-	-	-	Clamp On	-	-40°C ~ 140°C
MS1N6392 POWER SCHOTTKY Microchip Technology	3,295	-	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MS1N6392/TR POWER SCHOTTKY Microchip Technology	2,963	-	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
D1381S45TXPSA1 DIODE GEN PURP 4.5KV 1630A Infineon Technologies	2,933	-	RFQ	Datasheet	-	DO-200AD	Tray	Active	Standard	4500 V	1630A	2.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	-	-	Chassis Mount	-	-40°C ~ 140°C
D4201N22TXPSA1 DIODE GEN PURP 2.2KV 6010A Infineon Technologies	3,774	-	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	2200 V	6010A	1 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 2200 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
E1780TG65E DIODE GEN PURP 3.6KV 1780A - IXYS	8,071	-	RFQ	-	SONIC-FRD™	TO-200AF	Box	Active	Standard	3600 V	1780A	3.83 V @ 1780 A	Standard Recovery >500ns, > 200mA (Io)	1.22 µs	100 mA @ 3600 V	-	-	-	Chassis Mount	-	-40°C ~ 140°C
D1461S45TXPSA1 DIODE GEN PURP 1720A D10026K-1 Infineon Technologies	3,036	-	RFQ	Datasheet	-	DO-200, Variant	Tray	Active	Standard	-	1720A	-	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 4500 V	-	-	-	Chassis Mount	BG-D10026K-1	-40°C ~ 140°C
D3041N65TXPSA1 DIODE GEN PURP 6.5KV 4090A Infineon Technologies	4,966	-	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	6500 V	4090A	1.7 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 6500 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C

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