STMicroelectronics SCTWA35N65G2VAG

Part No.:
SCTWA35N65G2VAG
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
FullcoresSCTWA35N65G2VAG.pdf
Description:
SICFET N-CH 650V 45A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,522

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Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Rds On (Max) @ Id, Vgs:
72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
208W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 Long Leads

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6. What is the process for return or replacement of SCTWA35N65G2VAG?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SCTWA35N65G2VAG we delivered, we will accept the replacement or return of the SCTWA35N65G2VAG only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTWA35N65G2VAG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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