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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
HERAF803G 50NS, 8A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	5,364	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF801GH 50NS, 8A, 50V, HIGH EFFICIENT RE Taiwan Semiconductor Corporation	5,329	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF801G 50NS, 8A, 50V, HIGH EFFICIENT RE Taiwan Semiconductor Corporation	8,554	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1003GH 50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation	8,784	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF802G 50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	8,259	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF802GH 50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,945	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1003G 50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation	5,946	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1001GH 50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,897	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1001G 50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,646	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1002GH 50NS, 10A, 100V, HIGH EFFICIENT Taiwan Semiconductor Corporation	6,542	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1002G 50NS, 10A, 100V, HIGH EFFICIENT Taiwan Semiconductor Corporation	8,769	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
STPS8L30B DIODE SCHOTTKY 30V 8A DPAK STMicroelectronics	6,223	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	Schottky	30 V	8A	490 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	-	-	Surface Mount	DPAK	150°C (Max)
STTA312B DIODE GEN PURP 1.2KV 3A DPAK STMicroelectronics	2,808	-	RFQ	Datasheet	TURBOSWITCH™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	Standard	1200 V	3A	1.8 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1200 V	-	-	-	Surface Mount	DPAK	125°C (Max)
MBR30150-BP Interface Micro Commercial Co	9,370	-	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Schottky	150 V	30A	880 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
RF051VA2STR DIODE GEN PURP 200V 500MA TUMD2 Rohm Semiconductor	4,223	-	RFQ	Datasheet	-	2-SMD, Flat Leads	Tape & Reel (TR)	Active	Standard	200 V	500mA	980 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	-	-	Surface Mount	TUMD2	150°C (Max)
S3K DIODE SMC 800V 3A 150C Micro Commercial Co	4,428	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Standard	800 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
MA3X78600L DIODE SCHOTT 30V 100MA MINI3-G1 Panasonic Electronic Components	8,028	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	30 V	100mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	2 ns	15 µA @ 30 V	20pF @ 0V, 1MHz	-	-	Surface Mount	Mini3-G1	125°C (Max)
MBRS320 DIODE SCHOTTKY 20V 4A SMC onsemi	8,860	-	RFQ	-	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Schottky	20 V	4A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Surface Mount	DO-214AB (SMC)	-65°C ~ 125°C
U2D-E3/52T DIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division	2,214	-	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Obsolete	Standard	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	27 ns	10 µA @ 200 V	-	-	-	Surface Mount	DO-214AA (SMB)	-55°C ~ 150°C
BAT30LFILM DIODE SCHOTTKY 30V 300MA SOD923 STMicroelectronics	6,493	-	RFQ	Datasheet	-	SOD-923	Tape & Reel (TR)	Obsolete	Schottky	30 V	300mA	530 mV @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	22pF @ 0V, 1MHz	-	-	Surface Mount	SOD-923	150°C (Max)

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